研究电化学测量的外部条件对半导体光电化学性质的影响:循环伏安法、阻抗谱法和莫特-肖特基法

D. Markovskaya, N. Sidorenko, A. Zhurenok, E. Kozlova
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引用次数: 0

摘要

本文研究了CdS和ZnS固溶体、石墨化氮化碳和镀铂化氮化碳等半导体材料的光电化学性质与实验条件的关系。得到了不同扫描速率下的循环伏安图。采用恒外电压变化幅值和不同外电压固定幅值两种方式对样品进行调查。在不同频率下研究了莫特-肖特基依赖性。发现了光电极靶特性变化与实验条件的基本依赖关系。提出了正确比较定性和定量光电化学数据的一些建议。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Studying effects of external conditions of electrochemical measurements on the photoelectrochemical properties of semiconductors: cyclic voltammetry, impedance spectroscopy, and Mott – Schottky method
In this paper, the dependences of the semiconductors’ photoelectrochemical properties on the experimental conditions were studied for the solid solution of CdS and ZnS, graphitic carbon nitride, and the platinized carbon nitride. The cyclic voltammograms were obtained under different scan rates. The sample investigations were carried out by two ways, at the constant external voltage and varied amplitudes and at different external voltages and the fixed amplitude. The Mott – Schottky dependences were studied at different frequencies. The basic dependences of the changes in the photoelectrode target characteristics on the experimental condition were found. Some recommendations for the correct comparison of qualitative and quantitative photoelectrochemical data were formulated.
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