B. T. Tung, Xiaojin Cheng, N. Watanabe, F. Kato, K. Kikuchi, M. Aoyagi
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Fabrication and electrical characterization of Parylene-HT liner bottom-up copper filled through silicon via (TSV)
In this study, Parylene-HT, the newest commercially available parylene with the lowest dielectric constant and highest temperature tolerance within all the series, was investigated as insulation/liner in the application of through-silicon-via (TSV). Bottom-up copper filled TSV with 1 μm Parylene-HT insulator was realized on a 100 μm-thick Si wafer through via etching, parylene vapor deposition, and electroplating processes. The fabrication process on the 36 μm diameter TSVs, are reported here, as well as their electrical properties, including DC leakage and capacitance.
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