金属栅极叠层MoN和TiN MOS器件的特性和热稳定性

2007 International Semiconductor Device Research Symposium Pub Date : 2007-12-01 DOI:10.1109/ISDRS.2007.4422420

C. Fu, K. Chang-Liao, P. Chien

{"title":"金属栅极叠层MoN和TiN MOS器件的特性和热稳定性","authors":"C. Fu, K. Chang-Liao, P. Chien","doi":"10.1109/ISDRS.2007.4422420","DOIUrl":null,"url":null,"abstract":"In this work, a novel metal gate stack is proposed for PMOS applications. The influences of MoN metal gate with TiN layer above or below and various post-metal-annealing treatments were studied. Experimental results show that metal gate stack with TiN under MoN film exhibits better electrical characteristics and thermal stability despite a little lower work function.","PeriodicalId":379313,"journal":{"name":"2007 International Semiconductor Device Research Symposium","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characteristics and thermal stability of MOS devices with metal gate stacks of MoN and TiN\",\"authors\":\"C. Fu, K. Chang-Liao, P. Chien\",\"doi\":\"10.1109/ISDRS.2007.4422420\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a novel metal gate stack is proposed for PMOS applications. The influences of MoN metal gate with TiN layer above or below and various post-metal-annealing treatments were studied. Experimental results show that metal gate stack with TiN under MoN film exhibits better electrical characteristics and thermal stability despite a little lower work function.\",\"PeriodicalId\":379313,\"journal\":{\"name\":\"2007 International Semiconductor Device Research Symposium\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Semiconductor Device Research Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2007.4422420\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Semiconductor Device Research Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2007.4422420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，提出了一种用于PMOS应用的新型金属栅极堆栈。研究了在MoN金属栅极上或下有TiN层以及不同的金属后退火处理对栅极性能的影响。实验结果表明，金属栅极叠层在MoN薄膜下具有较好的电学特性和热稳定性，但其功函数略低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characteristics and thermal stability of MOS devices with metal gate stacks of MoN and TiN

In this work, a novel metal gate stack is proposed for PMOS applications. The influences of MoN metal gate with TiN layer above or below and various post-metal-annealing treatments were studied. Experimental results show that metal gate stack with TiN under MoN film exhibits better electrical characteristics and thermal stability despite a little lower work function.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 International Semiconductor Device Research Symposium

自引率

0.00%

发文量