提出了一种改进的纳米MOSFET阈值电压提取方法

2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia) Pub Date : 2017-10-01 DOI:10.1109/PRIMEASIA.2017.8280350

Yashu Swami, Sanjeev Rai

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引用次数: 3

摘要

通过几种估计技术，精确地求出了阈值。有效的阈值电压定义和提取方法的控制表可以在整个操作条件和技术节点中逐项列出清晰，简单，精确和稳定。由于器件中存在各种短通道效应(SCE)、二阶效应和非理想性，这些值会出现分歧。本文提出了一种新的用于定义和提取纳米MOSFET阈值电压的改进方法。对SCE独立的阈值电压提取方法混合外推法(Hybrid Extrapolation Vth extraction Method, HEEM)进行了阐述、建模，并与其他常用的阈值电压提取方法进行了比较，验证了提取结果。结果通过广泛的二维TCAD仿真得到验证，并在各个技术节点上进行了分析验证。

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Proposing an enhanced approach of threshold voltage extraction for nano MOSFET

Precise threshold voltage value is evaluated by several estimation techniques. The governing gauge for efficient threshold voltage definition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology nodes. The values diverge due to various short channel effects (SCE), second order effects and non-idealities present in the device. A new enhanced approach for defining and extracting the threshold voltage for nano MOSFET is presented in the manuscript. The SCE independent threshold voltage extraction approach named Hybrid Extrapolation Vth Extraction Method (HEEM) is elaborated, modeled and compared with other prevalent threshold voltage extraction methods for validation of the results. The results are demonstrated by extensive 2-D TCAD simulation and confirmed analytically at various technology nodes.

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来源期刊

2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)

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