GaNxAs1-X合金结构和电子性能的第一性原理研究

W. Shu, Xia Zhang, Qi Wang, Yongqing Huang, X. Ren
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引用次数: 0

摘要

利用第一性原理总能量计算,我们在密度泛函理论(DFT)框架下研究了GaNxAs1-x合金的结构和电子性能。通过对晶格参数和带隙弯曲的计算,证明了局部密度近似和广义梯度近似的有效性。结果表明,相对而言,LDA法更适合于计算gaas合金。计算得到的晶格常数的减小符合维加德定律,而带隙的弯曲参数与成分有关。还讨论了弛豫原子和键的影响。弛豫对带隙弯曲有显著影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First-Principles Study of Structural and Electronic Properties of GaNxAs1-X Alloys
Using first-principles total energy calculations, we have studied the structural and electronic properties of GaNxAs1-x alloys within density-functional theory (DFT) framework. The validity of Local density approximation (LDA) and generalized gradient approximation (GGA) has been demonstrated by the calculations of lattice parameters and band-gap bowing. The results show that LDA is relatively more suitable for calculations of GaNAs alloy. The lattice constant calculated decreases in line with vegard's law in contrast to that the band gap has big composition-dependent bowing parameters. The effects of relaxed atoms and bonds have also been discussed. The relaxation contributes significantly to band-gap bowing.
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