缺陷对多晶铜薄膜晶粒及晶界强度的影响

Ken Suzuki, Fang Yiqing, Yifan Luo, H. Miura
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引用次数: 1

摘要

本研究利用电子背散射衍射(EBSD)方法获得的IQ (Image quality)值评价电镀铜薄膜原子排列顺序的晶界质量,并利用微拉伸试验评价镀层的晶粒和晶界强度。此外,为了研究强度与晶界质量之间的关系,应用分子动力学(MD)模拟分析了双晶样品的变形行为及其强度。强度和变形性能的变化主要是由于晶界周围缺陷密度高于晶内缺陷密度,阻碍了滑移体系的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Defects on the Grain and Grain Boundary Strength in Polycrystalline Copper Thin Films
In this study, grain boundary quality in terms of order of atomic arrangement of electroplated copper thin films was evaluated by using the IQ (Image Quality) value obtained from an electron back-scatter diffraction (EBSD) method, and the grain and grain boundary strength was evaluated by applying micro tensile test. In addition, in order to investigate the relationship between the strength and grain boundary quality, molecular dynamics (MD) simulations were applied to analyze the deformation behavior of a bicrystal sample and its strength. The variation of the strength and deformation property were attributed to the higher defect density around grain boundaries than that in grains, which impeded the development of slip systems.
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