H. He, T. Janssen, S. Rozhko, A. Tzalenchuk, S. Lara‐Avila, R. Yakimova, S. Kubatkin
{"title":"低温台式系统中石墨烯量子霍尔电阻标准的制备","authors":"H. He, T. Janssen, S. Rozhko, A. Tzalenchuk, S. Lara‐Avila, R. Yakimova, S. Kubatkin","doi":"10.1109/CPEM.2016.7540516","DOIUrl":null,"url":null,"abstract":"We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.","PeriodicalId":415488,"journal":{"name":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Fabrication of graphene quantum hall resistance standard in a cryogen-table-top system\",\"authors\":\"H. He, T. Janssen, S. Rozhko, A. Tzalenchuk, S. Lara‐Avila, R. Yakimova, S. Kubatkin\",\"doi\":\"10.1109/CPEM.2016.7540516\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.\",\"PeriodicalId\":415488,\"journal\":{\"name\":\"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.2016.7540516\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.2016.7540516","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication of graphene quantum hall resistance standard in a cryogen-table-top system
We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.
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