{"title":"三维集成电路中耦合tsv的建模","authors":"Ege Engin, Srinidhi Raghavan","doi":"10.1109/ISEMC.2012.6351759","DOIUrl":null,"url":null,"abstract":"This paper presents analytical formulas to extract an equivalent circuit model for coupled through silicon via (TSV) structures in a 3D integrated circuit. We make use of a multiconductor transmission line approach to model coupled TSV structures. TSVs are embedded in a lossy silicon medium, hence they behave as metal-insulator-semiconductor (MIS) transmission lines. The models we present can accurately capture the transition between slow-wave and dielectric quasi-TEM modes, which are characteristic for MIS transmission lines, as well as the metal-oxide-semiconductor (MOS) varactor capacitance. The results are validated against 2D quasi-static simulations and 3D full-wave electromagnetic simulations. The derived equivalent circuit models can easily be applied in circuit simulators to analyze crosstalk behavior of TSVs in a 3D integrated system.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Modeling of coupled TSVs in 3D ICs\",\"authors\":\"Ege Engin, Srinidhi Raghavan\",\"doi\":\"10.1109/ISEMC.2012.6351759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents analytical formulas to extract an equivalent circuit model for coupled through silicon via (TSV) structures in a 3D integrated circuit. We make use of a multiconductor transmission line approach to model coupled TSV structures. TSVs are embedded in a lossy silicon medium, hence they behave as metal-insulator-semiconductor (MIS) transmission lines. The models we present can accurately capture the transition between slow-wave and dielectric quasi-TEM modes, which are characteristic for MIS transmission lines, as well as the metal-oxide-semiconductor (MOS) varactor capacitance. The results are validated against 2D quasi-static simulations and 3D full-wave electromagnetic simulations. The derived equivalent circuit models can easily be applied in circuit simulators to analyze crosstalk behavior of TSVs in a 3D integrated system.\",\"PeriodicalId\":197346,\"journal\":{\"name\":\"2012 IEEE International Symposium on Electromagnetic Compatibility\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.2012.6351759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.2012.6351759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents analytical formulas to extract an equivalent circuit model for coupled through silicon via (TSV) structures in a 3D integrated circuit. We make use of a multiconductor transmission line approach to model coupled TSV structures. TSVs are embedded in a lossy silicon medium, hence they behave as metal-insulator-semiconductor (MIS) transmission lines. The models we present can accurately capture the transition between slow-wave and dielectric quasi-TEM modes, which are characteristic for MIS transmission lines, as well as the metal-oxide-semiconductor (MOS) varactor capacitance. The results are validated against 2D quasi-static simulations and 3D full-wave electromagnetic simulations. The derived equivalent circuit models can easily be applied in circuit simulators to analyze crosstalk behavior of TSVs in a 3D integrated system.