Yaohui Zhang, Yuebo Li, Yan-zhao Xie, Jie Yang, Jiuliang Xiong, Wei He
{"title":"基于碳化硅材料的电视器件的设计与研究","authors":"Yaohui Zhang, Yuebo Li, Yan-zhao Xie, Jie Yang, Jiuliang Xiong, Wei He","doi":"10.1109/GEMCCON50979.2020.9456690","DOIUrl":null,"url":null,"abstract":"Surge disturbance can be generated by high power electromagnetic pulse coupling on the cable of electronic information equipment. Transient voltage suppressor (TVS) is an important protective device to suppress surge disturbance. Most of the existing TVS devices are Si-based materials, and Si-TVS devices have shortcomings in the current capacity, high-temperature characteristics, etc. In this paper, SiC materials are selected to design new SiC-TVS devices, and the surface leakage characteristics are improved by terminal junction expansion technology. The testing results show that the new SiC-TVS devices have better characteristics in current capacity and high temperature performance.","PeriodicalId":194675,"journal":{"name":"2020 6th Global Electromagnetic Compatibility Conference (GEMCCON)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Research of TVS Devices Based on Silicon Carbide Material\",\"authors\":\"Yaohui Zhang, Yuebo Li, Yan-zhao Xie, Jie Yang, Jiuliang Xiong, Wei He\",\"doi\":\"10.1109/GEMCCON50979.2020.9456690\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surge disturbance can be generated by high power electromagnetic pulse coupling on the cable of electronic information equipment. Transient voltage suppressor (TVS) is an important protective device to suppress surge disturbance. Most of the existing TVS devices are Si-based materials, and Si-TVS devices have shortcomings in the current capacity, high-temperature characteristics, etc. In this paper, SiC materials are selected to design new SiC-TVS devices, and the surface leakage characteristics are improved by terminal junction expansion technology. The testing results show that the new SiC-TVS devices have better characteristics in current capacity and high temperature performance.\",\"PeriodicalId\":194675,\"journal\":{\"name\":\"2020 6th Global Electromagnetic Compatibility Conference (GEMCCON)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 6th Global Electromagnetic Compatibility Conference (GEMCCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GEMCCON50979.2020.9456690\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 6th Global Electromagnetic Compatibility Conference (GEMCCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GEMCCON50979.2020.9456690","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Research of TVS Devices Based on Silicon Carbide Material
Surge disturbance can be generated by high power electromagnetic pulse coupling on the cable of electronic information equipment. Transient voltage suppressor (TVS) is an important protective device to suppress surge disturbance. Most of the existing TVS devices are Si-based materials, and Si-TVS devices have shortcomings in the current capacity, high-temperature characteristics, etc. In this paper, SiC materials are selected to design new SiC-TVS devices, and the surface leakage characteristics are improved by terminal junction expansion technology. The testing results show that the new SiC-TVS devices have better characteristics in current capacity and high temperature performance.