Fabian Hecht, Florian Bauereiβ, J. Sellmair, P. Buchner, M. Hausladen, R. Schreiner
{"title":"电子束诱导碳纳米尖在钨硅场致发光材料上生长","authors":"Fabian Hecht, Florian Bauereiβ, J. Sellmair, P. Buchner, M. Hausladen, R. Schreiner","doi":"10.1109/IVNC57695.2023.10188960","DOIUrl":null,"url":null,"abstract":"In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters\",\"authors\":\"Fabian Hecht, Florian Bauereiβ, J. Sellmair, P. Buchner, M. Hausladen, R. Schreiner\",\"doi\":\"10.1109/IVNC57695.2023.10188960\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).\",\"PeriodicalId\":346266,\"journal\":{\"name\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC57695.2023.10188960\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC57695.2023.10188960","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters
In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).