模拟信号路径电路的四晶体管像素在标准0.13μm CMOS技术

Suhaidi bin Shafie, N. A. M. Yunus, Ong Wei Chiek, W. C. Yew, I. Halin
{"title":"模拟信号路径电路的四晶体管像素在标准0.13μm CMOS技术","authors":"Suhaidi bin Shafie, N. A. M. Yunus, Ong Wei Chiek, W. C. Yew, I. Halin","doi":"10.1109/PRIMEASIA.2017.8280382","DOIUrl":null,"url":null,"abstract":"This project is aimed to develop the layout for the analog signal path of a 4 transistor pixel CMOS image sensor using EDA tools in standard 0.13μm Silterra fabrication technology. The sub-circuit blocks that define the analog input-output path consists of the 320×240 pixel array, 320 column parallel correlated double sampling circuits, an output buffer amplifier and all associated bias circuitry. Each pixel size has a dimension of 10μm × 10μm. The pixel's frame rate is targeted to be 120 frames per second (fps) working in a QVGA picture format (320× 240 pixels). From simulation, the illumination range of 0.01 lux to 0.25 lux has been tested and shows only a 2.8% error from the ideal output linearity.","PeriodicalId":335218,"journal":{"name":"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analog signal path circuit for a four transistor pixel in standard 0.13μm CMOS technology\",\"authors\":\"Suhaidi bin Shafie, N. A. M. Yunus, Ong Wei Chiek, W. C. Yew, I. Halin\",\"doi\":\"10.1109/PRIMEASIA.2017.8280382\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This project is aimed to develop the layout for the analog signal path of a 4 transistor pixel CMOS image sensor using EDA tools in standard 0.13μm Silterra fabrication technology. The sub-circuit blocks that define the analog input-output path consists of the 320×240 pixel array, 320 column parallel correlated double sampling circuits, an output buffer amplifier and all associated bias circuitry. Each pixel size has a dimension of 10μm × 10μm. The pixel's frame rate is targeted to be 120 frames per second (fps) working in a QVGA picture format (320× 240 pixels). From simulation, the illumination range of 0.01 lux to 0.25 lux has been tested and shows only a 2.8% error from the ideal output linearity.\",\"PeriodicalId\":335218,\"journal\":{\"name\":\"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PRIMEASIA.2017.8280382\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PRIMEASIA.2017.8280382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

该项目旨在使用标准0.13μm Silterra制造技术的EDA工具开发4晶体管像素CMOS图像传感器的模拟信号路径布局。定义模拟输入输出路径的子电路模块由320×240像素阵列、320列并行相关双采样电路、输出缓冲放大器和所有相关偏置电路组成。每个像素尺寸为10μm × 10μm。在QVGA图像格式(320× 240像素)下,像素的帧率目标为每秒120帧(fps)。通过仿真,测试了0.01勒克斯到0.25勒克斯的照明范围,与理想输出线性度的误差仅为2.8%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analog signal path circuit for a four transistor pixel in standard 0.13μm CMOS technology
This project is aimed to develop the layout for the analog signal path of a 4 transistor pixel CMOS image sensor using EDA tools in standard 0.13μm Silterra fabrication technology. The sub-circuit blocks that define the analog input-output path consists of the 320×240 pixel array, 320 column parallel correlated double sampling circuits, an output buffer amplifier and all associated bias circuitry. Each pixel size has a dimension of 10μm × 10μm. The pixel's frame rate is targeted to be 120 frames per second (fps) working in a QVGA picture format (320× 240 pixels). From simulation, the illumination range of 0.01 lux to 0.25 lux has been tested and shows only a 2.8% error from the ideal output linearity.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信