用于l波段应用的高性能GaN HEMT ab类射频功率放大器

Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST) Pub Date : 2013-05-02 DOI:10.1109/IBCAST.2013.6512186

K. Hayat, A. Kashif, S. Azam, T. Mehmood, M. Imran

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引用次数: 10

摘要

本文介绍了一种用于1.3 GHz l波段雷达的基于GaN HEMT的ab类功率放大器的设计和特性。本文的目的是设计和开发一种高效率、小尺寸和低成本的30瓦扩音解决方案。通过对源阻抗和负载-拉阻抗进行提取，获得了最佳的ab类PA性能。制作的PA在1db压缩点提供45.5 dBm的射频功率。功率附加效率(PAE)为63%，在期望频率下功率增益为13.5 dB。

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High performance GaN HEMT class-AB RF power amplifier for L-band applications

This paper presents the design and characterization of a GaN HEMT based class-AB power amplifier (PA) for L-band radar applications at 1.3 GHz. The aim of this paper is to design and develop a 30 Watt PA together with high efficiency, small in size and low-cost solution. The source and load impedances have been extracted by performing source and load-pull for attaining an optimal performance of class-AB PA. The fabricated PA provides an RF power of 45.5 dBm at 1-dB compression point. The power added efficiency (PAE) of 63% is achieved together with power gain of 13.5 dB at desired frequency.

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Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)

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