基于Chebyshev人工传输线匹配的124ghz - 152ghz > 15dbm $\mathbf{P}_{\text{sat}}$ 28nm CMOS放大器用于宽带功率分合

2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI:10.1109/RFIC54546.2022.9863134

Jincheng Zhang, Tianxiang Wu, Yong Chen, Junyan Ren, Shunli Ma

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引用次数: 0

摘要

提出了一种饱和输出功率>15 dBm $(\mathbf{P}_{\text{sat}})$的28纳米CMOS工艺的124-152 GHz功率放大器。采用基于低耦合变压器的四阶匹配网络，以低插入损耗和紧凑的面积扩展带宽。为了在不牺牲BW的前提下进一步提高输出功率，提出了一种四路切比雪夫型人工传输线功率合成器。测量结果表明，该放大器在28 GHz 3-dB BW下可获得22.6 $\mathbf{dB}$的峰值增益。带内$\mathbf{P}_{\mathbf{sat}}$ >15 dBm，在135 GHz时最大输出功率为16.2 dBm。芯片的总面积为$\mathbf{0.66}\mathbf{\times}\mathbf{0.73}\ \mathbf{mm}^{\mathbf{2}}$•

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A 124–152 GHz > 15-dBm $\mathbf{P}_{\text{sat}}$ 28-nm CMOS PA Using Chebyshev Artificial- Transmission-Line-Based Matching for Wideband Power Splitting and Combining

This paper presents a 124–152 GHz power amplifier (PA) with >15 dBm saturation output power $(\mathbf{P}_{\text{sat}})$ in a 28-nm CMOS process. Low-coupling transformer-based fourth-order matching networks are used to extend the bandwidth (BW) with low insertion loss and compact area. A four-way Chebyshev-type artificial-transmission-line-based power combiner is proposed to further improve the output power without sacrificing BW. The measurement results show that this P A can achieve a peak gain of 22.6 $\mathbf{dB}$ with 28 GHz 3-dB BW. The in-band $\mathbf{P}_{\mathbf{sat}}$ is >15 dBm with a maximum output power of 16.2 dBm at 135 GHz. The total area of the chip is $\mathbf{0.66}\mathbf{\times}\mathbf{0.73}\ \mathbf{mm}^{\mathbf{2}}$ •

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2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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