硅PiN与SiC肖特基二极管开关能量损耗的比较研究

PECon 2004. Proceedings. National Power and Energy Conference, 2004. Pub Date : 2004-11-29 DOI:10.1109/PECON.2004.1461646

N. Yahaya, K. C. Chew

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引用次数: 16

摘要

本文的目的是比较碳化硅肖特基二极管和硅PiN二极管的开关能量损耗。采用Pspice软件对电感式负载斩波电路进行了仿真。用于模拟的两种二极管模型均来自英飞凌;碳化硅肖特基(SDP04S60, 4 A/600 V)和硅引脚(IDP06E60, 6 A/600 V)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparative study of the switching energy losses between Si PiN and SiC Schottky diode

paper is to compare the switching energy losses of the silicon carbide Schottky diode with the silicon PiN diode. The comparison is done using an inductive load chopper circuit simulated with Pspice, a type of circuit analysis software. Both diode models used for the simulation are from Infineon; the silicon carbide Schottky (SDP04S60, 4 A/600 V) and silicon PiN (IDP06E60, 6 A/600 V).

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PECon 2004. Proceedings. National Power and Energy Conference, 2004.

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