热载流子应力建模:从降解动力学到圈闭分布演化

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 2015-10-01 DOI:10.1109/IIRW.2015.7437086

G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo

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引用次数: 5

摘要

提出了一种解决Flash技术热载流子退化问题的完整TCAD模型。在强调了老化动力学需要一个低指数的幂律，并考虑了反映单电子冲击模式的高活化能之后，实现了精细校准。最后，分析了不同通道位置的陷阱分布和老化率。

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Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.

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2015 IEEE International Integrated Reliability Workshop (IIRW)

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