Co/a-SiGe/Si固相反应形成CoSi/ sub2 //SiGe触点

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496393

W. Qi, B. Li, G. Jiang, W.N. Huang, Z. Gu

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引用次数: 1

摘要

本文研究了Co/a-SiGe/Si的固相反应。实验结果表明，同时形成了SiGe/Si固相异质外延和CoSi/ sub2 //SiGe接触。SiGe的结晶是Co/a-SiGe/Si三元相互作用过程中Ge的排斥和Si的相互扩散的结果。

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CoSi/sub 2//SiGe contact formation by Co/a-SiGe/Si solid state reaction

The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi/sub 2//SiGe contact formation. The SiGe crystallization is a result of the Ge rejection and interdiffusion with Si during the Co/a-SiGe/Si ternary interaction.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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