CdTe:V中1.5 μm的光折射率

Topical Meeting on Photorefractive Materials, Effects, and Devices II Pub Date : 1990-08-27 DOI:10.1063/1.103409

A. Partovi, J. Millerd, E. Garmire, M. Ziari, W. Steier, S. Trivedi, M. Klein

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引用次数: 127

摘要

CdTe是迄今为止已知的光折变半导体(GaAs, InP和CdTe)中研究最少的。考虑到CdTe的电光系数几乎是GaAs和InP的四倍，这有点令人惊讶。CdTe也是最灵敏的光折变介质之一。其光折射率(每吸收光子的折射率变化)n3r41/εr是GaAs的2.5倍。

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Photorefractivity at 1.5 μm in CdTe:V

CdTe is the least studied of the photorefractive semiconductors known to date (GaAs, InP, and CdTe). This is somewhat surprising considering that the electrooptic coefficient of CdTe is almost four times larger than that of GaAs and InP. CdTe is also one of the most sensitive photorefractive media available. Its photorefractive figure of merit for sensitivity (index change per absorbed photon), n3r41/εr is 2.5 times that of GaAs.

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$Topical Meeting on Photorefractive Materials, Effects, and Devices II$

Topical Meeting on Photorefractive Materials, Effects, and Devices II

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