Jing Yin, F. Lan, Luyang Wang, Ziqiang Yang, Yaxin Zhang, Zongjun Shi, Wenxin Liu
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Flexible manipulation of polarization state plays a pivotal role in terahertz (THz) communication, detection, and sensing systems[1]. Active metasurfaces exhibit distinguished potentials regulation concerning amplitude and phase modulation. However, various demonstrations of THz polarization modulation in metasurfaces under optical, thermal and electric stimuli have been implemented with limited performances, implanting high electron mobility transistor (HEMT) into metasurfaces for fast veering resonant characteristics provides an effective approach for dynamic terahertz polarization modulation chip.
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