{"title":"地结合线对CMOS e类功率放大器性能的影响","authors":"Masoud Yavari, S. Naseh","doi":"10.1109/ICECS.2011.6122347","DOIUrl":null,"url":null,"abstract":"The effect of the ground bond-wire inductance on the performance of class-E power amplifiers is analyzed and investigated. It is shown that for a given supply voltage and output power, this inductance decreases the value of the series excessive reactance and the voltage stress on the active device. The simulation results of a quasi-ideal circuit and a CMOS circuit in presence of a typical ground bond-wire inductance of 1 nH are presented to validate the analysis.","PeriodicalId":251525,"journal":{"name":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of ground bond-wire on the performance of CMOS class-E power amplifiers\",\"authors\":\"Masoud Yavari, S. Naseh\",\"doi\":\"10.1109/ICECS.2011.6122347\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of the ground bond-wire inductance on the performance of class-E power amplifiers is analyzed and investigated. It is shown that for a given supply voltage and output power, this inductance decreases the value of the series excessive reactance and the voltage stress on the active device. The simulation results of a quasi-ideal circuit and a CMOS circuit in presence of a typical ground bond-wire inductance of 1 nH are presented to validate the analysis.\",\"PeriodicalId\":251525,\"journal\":{\"name\":\"2011 18th IEEE International Conference on Electronics, Circuits, and Systems\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 18th IEEE International Conference on Electronics, Circuits, and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2011.6122347\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2011.6122347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effect of ground bond-wire on the performance of CMOS class-E power amplifiers
The effect of the ground bond-wire inductance on the performance of class-E power amplifiers is analyzed and investigated. It is shown that for a given supply voltage and output power, this inductance decreases the value of the series excessive reactance and the voltage stress on the active device. The simulation results of a quasi-ideal circuit and a CMOS circuit in presence of a typical ground bond-wire inductance of 1 nH are presented to validate the analysis.
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