基于TCAD的CMOS单事件锁存效应研究

2017 Second International Conference on Reliability Systems Engineering (ICRSE) Pub Date : 2017-07-01 DOI:10.1109/ICRSE.2017.8030787

Maogong Jiang, Guicui Fu, B. Wan, Meisi Jia, Y. Qiu

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引用次数: 2

摘要

互补金属氧化物半导体(CMOS)广泛应用于高可靠性领域，容易受到单事件锁存效应(SEL)的影响。基于技术计算机辅助设计(Technology Computer Aided Design, TCAD)仿真软件，选取典型CMOS结构进行SEL效应仿真，研究不同条件下的仿真结果。总结了仿真条件与仿真结果之间的关系。为提高设计可靠性，对CMOS元件的sel增强设计和应用提供了指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Research on single event latch-up effect of CMOS based on TCAD

Complementary metal oxide semiconductor (CMOS) is widely used in high reliability field, and is susceptible to single event latch-up (SEL) effect. Based on Technology Computer Aided Design (TCAD) simulation software, a typical CMOS structure is selected to simulate SEL effect and study the simulation results under different conditions. The relation between the simulation condition and the simulation result is concluded. The instructions for SEL-reinforcement design and applications of the CMOS components are obtained to improve the design reliability.

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来源期刊

2017 Second International Conference on Reliability Systems Engineering (ICRSE)

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