增强型GaN功率晶体管的通断特性研究

2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe) Pub Date : 2018-09-01 DOI:10.5072/ZENODO.45670

F. Karakaya, M. Ugur, O. Keysan

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引用次数: 2

摘要

本文研究了650V增强型GaN功率场效应管的通断特性。建立了一个分析模型来分析器件在有和没有寄生元件影响的开关瞬态过程中的电流-电压特性。此外，还研究了温度和电路参数对开关特性的影响。

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Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors

In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated.

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来源期刊

2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

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