常关断碳化硅JFET的动态特性

K. Shili, R. Gharbi, M. B. Karoui
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引用次数: 0

摘要

本文提出了基于4H-SiC (1200V-17A)的JFET的常关动态行为,该动态行为取决于电极之间的结电容。这些电容随外加电压的变化表明了这些参数之间的非线性关系。对JFET的开关动态特性进行了研究,并与PSPICE仿真结果进行了比较。根据实验波和仿真波的形式,我们可以提取出较低的开关时间:导通Ton和关断Toff (10-6s数量级),并且仍然证明了这些晶体管的开关速度之快。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dynamic Characteristics of Normally-OFF Silicon Carbide JFET
We propose in this paper the study of the dynamic behavior of the JFET Normally-off based on 4H-SiC (1200V-17A), which depends on junction capacitances between the electrodes. The evolution of these capacitances as a function of the applied voltage shows the non-linearity between these parameters. The dynamic behavior in switching of the JFET has been studied and compared with the results found by simulation using PSPICE. According to the forms of experimental and simulation waves, we have able to extract the switching time: turn-on Ton and turn-off Toff which are low ( of the order of 10-6s) and still proves the rapidity of the switching speed of these transistors.
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