{"title":"直流偏置应力下氢化非晶硅薄膜晶体管阈值电压退化的恢复特性","authors":"Han-Wen Liu, Chien-hung Lin, Fang-Hsing Wang","doi":"10.1109/ISNE.2016.7543288","DOIUrl":null,"url":null,"abstract":"The recovery characteristics of threshold voltage (Vth) for the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) stressed under the DC bias conditions are investigated. No matter what the positive or negative gate biased stresses, there are recovery phenomena existing in the Vth degradation. The larger the magnitude of the stress voltage is, the larger the amount of Vth recovery is. Owing to the lower energy level of the hole trapping center within silicon nitride film than that of an electron, the recovery amount of Vth for the a-Si:H TFTs stressed at negative gate biased stress is larger than those stressed at positive gate biased stress.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Recovery characteristics of threshold voltage degradation for hydrogenated amorphous silicon thin-film transistors under DC bias stresses\",\"authors\":\"Han-Wen Liu, Chien-hung Lin, Fang-Hsing Wang\",\"doi\":\"10.1109/ISNE.2016.7543288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The recovery characteristics of threshold voltage (Vth) for the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) stressed under the DC bias conditions are investigated. No matter what the positive or negative gate biased stresses, there are recovery phenomena existing in the Vth degradation. The larger the magnitude of the stress voltage is, the larger the amount of Vth recovery is. Owing to the lower energy level of the hole trapping center within silicon nitride film than that of an electron, the recovery amount of Vth for the a-Si:H TFTs stressed at negative gate biased stress is larger than those stressed at positive gate biased stress.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recovery characteristics of threshold voltage degradation for hydrogenated amorphous silicon thin-film transistors under DC bias stresses
The recovery characteristics of threshold voltage (Vth) for the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) stressed under the DC bias conditions are investigated. No matter what the positive or negative gate biased stresses, there are recovery phenomena existing in the Vth degradation. The larger the magnitude of the stress voltage is, the larger the amount of Vth recovery is. Owing to the lower energy level of the hole trapping center within silicon nitride film than that of an electron, the recovery amount of Vth for the a-Si:H TFTs stressed at negative gate biased stress is larger than those stressed at positive gate biased stress.