Goker Ariyak, Monique Kirkman-Bey, N. Dogan, Zhijian Xie, M. Ketel
{"title":"基于130-nm SiGe BiCMOS的0.380-THz频率四倍器","authors":"Goker Ariyak, Monique Kirkman-Bey, N. Dogan, Zhijian Xie, M. Ketel","doi":"10.1109/SECON.2017.7925380","DOIUrl":null,"url":null,"abstract":"The first Constructive Wave Oscillator (CWO) based frequency quadrupler has been demonstrated in 130-nm SiGe BiCMOS. Proposed architecture efficiently generates a 0.380 THz signal using a strong fundamental CWO operating at W-band. Eight-section CWO produces 95 GHz signals that are distributed along the ring with 45 degree phases. Frequency quadrupler combines the signals from the CWO, fo, and produces a signal at 4fo. The frequency quadrupler circuit dissipates 76 mW of DC power from 2V supply. The CWO based frequency quadrupler operating at 380 GHz has a −28 dBm output power into 50 ohms load with a phase noise of −85 dBc per Hz at 1 MHz offset.","PeriodicalId":368197,"journal":{"name":"SoutheastCon 2017","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.380-THz frequency quadrupler based on Constructive Wave Oscillator in 130-nm SiGe BiCMOS\",\"authors\":\"Goker Ariyak, Monique Kirkman-Bey, N. Dogan, Zhijian Xie, M. Ketel\",\"doi\":\"10.1109/SECON.2017.7925380\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The first Constructive Wave Oscillator (CWO) based frequency quadrupler has been demonstrated in 130-nm SiGe BiCMOS. Proposed architecture efficiently generates a 0.380 THz signal using a strong fundamental CWO operating at W-band. Eight-section CWO produces 95 GHz signals that are distributed along the ring with 45 degree phases. Frequency quadrupler combines the signals from the CWO, fo, and produces a signal at 4fo. The frequency quadrupler circuit dissipates 76 mW of DC power from 2V supply. The CWO based frequency quadrupler operating at 380 GHz has a −28 dBm output power into 50 ohms load with a phase noise of −85 dBc per Hz at 1 MHz offset.\",\"PeriodicalId\":368197,\"journal\":{\"name\":\"SoutheastCon 2017\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SoutheastCon 2017\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.2017.7925380\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SoutheastCon 2017","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.2017.7925380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.380-THz frequency quadrupler based on Constructive Wave Oscillator in 130-nm SiGe BiCMOS
The first Constructive Wave Oscillator (CWO) based frequency quadrupler has been demonstrated in 130-nm SiGe BiCMOS. Proposed architecture efficiently generates a 0.380 THz signal using a strong fundamental CWO operating at W-band. Eight-section CWO produces 95 GHz signals that are distributed along the ring with 45 degree phases. Frequency quadrupler combines the signals from the CWO, fo, and produces a signal at 4fo. The frequency quadrupler circuit dissipates 76 mW of DC power from 2V supply. The CWO based frequency quadrupler operating at 380 GHz has a −28 dBm output power into 50 ohms load with a phase noise of −85 dBc per Hz at 1 MHz offset.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
