大规模并行视觉芯片的增强内存结构

Zhe Chen, Jie Yang, Liyuan Liu, N. Wu
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引用次数: 0

摘要

局部存储器结构在高性能大规模并行视觉芯片中起着重要的作用。在本文中,我们提出了一个增强的存储器架构,具有紧凑的电路面积,在一个完全定制的流程中设计。内存由独立的主阶段静态锁存和共享的从阶段动态锁存组成。我们在输入数据路径上使用分路传输晶体管来增强电荷共享的容忍度并实现随机读/写能力。该存储器采用0.18 μm CMOS工艺设计。内存的面积开销达到16.6 μm2/bit。仿真结果表明,在1.8 V电源电压下,64位存储单元的最大工作频率可达410 MHz,相应的峰值动态功耗为190 μW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhanced memory architecture for massively parallel vision chip
Local memory architecture plays an important role in high performance massively parallel vision chip. In this paper, we propose an enhanced memory architecture with compact circuit area designed in a full-custom flow. The memory consists of separate master-stage static latches and shared slave-stage dynamic latches. We use split transmission transistors on the input data path to enhance tolerance for charge sharing and to achieve random read/write capabilities. The memory is designed in a 0.18 μm CMOS process. The area overhead of the memory achieves 16.6 μm2/bit. Simulation results show that the maximum operating frequency reaches 410 MHz and the corresponding peak dynamic power consumption for a 64-bit memory unit is 190 μW under 1.8 V supply voltage.
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