具有III-V增益芯片的氮化硅PIC边缘耦合器外腔激光器

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673967

Ibrahim Ghannam, B. Shen, F. Merget, J. Witzens

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引用次数: 0

摘要

我们提出了一种外腔激光器，该激光器使用校准容差多模边缘耦合器将III-V增益芯片与氮化硅芯片耦合形成，其误差容差为12 μm。ECL具有42 kHz线宽和83 nm调谐范围。

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External Cavity Laser with Alignment Tolerant III-V Gain Chip to PIC Edge Coupler in Silicon Nitride

We present an external cavity laser formed by coupling a III-V gain chip to a silicon nitride chip using an alignment tolerant multimode edge coupler, resulting in a misalignment tolerance of 12 μm. The ECL has a 42 kHz linewidth and 83 nm tuning range.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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