Junduo Wen, Haoyuan Jin, Xiaobo Dong, Chuanjie Wan, Zheng Xu, Yongmei Gan, Hong Zhang, Laili Wang
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The bus-bar uses a copper-based multilayer laminated bus-bar so that the SiC modules can be connected to the DC-link capacitors in the low-inductance loops. The thermal performance and mechanical strength of the bus-bar are simulated by COMSOL, and the parasitic parameters of it are simulated by Ansys Q3D. In addition, the detection and control methods used in the PEBB are also mentioned. The structure of the PEBB is completed by the integrated layout design. Finally, a 57.6 kW PEBB prototype is built. A pump-back test platform whose topology is a dual active bridge is built through two PEBBs. The experiment shows the temperature rise of SiC modules is low, and the maximum drain-source voltage of the SiC MOSFET is 1244V. 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引用次数: 1
摘要
电力电子构件(PEBB)是一种基于标准化理念的新型电力电子设备结构。本文给出了额定57.6kW、1.2kV直流链路大功率PEBB的一般设计方法。所设计的PEBB采用1.7kV SiC MOSFET模块作为功率器件。本文介绍了直流电容的选择。给出了一种由铝散热器和4个直流风扇组成的风冷冷却系统的设计方法。为了验证冷却系统的性能,使用COMSOL软件模拟了SiC模块在全功率下的温度。给出了直流母线和交流端口的设计方案。母线采用基于铜的多层叠层母线,这样SiC模块就可以连接到低电感回路中的直流电容上。利用COMSOL软件对母线的热性能和机械强度进行了仿真,并用Ansys Q3D软件对母线的寄生参数进行了仿真。此外,还介绍了PEBB的检测和控制方法。通过整体布局设计完成了PEBB的结构设计。最后,建造了一个57.6千瓦的PEBB原型机。通过两个pebb构建了拓扑结构为双有源桥的回抽测试平台。实验表明,SiC模块的温升较低,SiC MOSFET的最大漏源电压为1244V。PEBB运行稳定可靠,功率为56.7kW,功率密度高达1920kW/m3。
Design of a High-Power Power Electronics Building Block Based on SiC MOSFET Modules
Power electronics building block (PEBB) is a new structure of power electronic equipment based on the concept of standardization. In this paper, a general design method for a high-power PEBB rated for 57.6kW, 1.2kV DC-link is given. The designed PEBB uses 1.7kV SiC MOSFET modules as power devices. The selection of DC-link capacitors is introduced in this paper. The design method of an air-cooled cooling system that contains an aluminum radiator and four DC fans is given. To verify the performance of the cooling system, COMSOL is used to simulate the SiC modules’ temperature under full-power operation. The design schemes of the DC bus-bar and AC ports are also presented. The bus-bar uses a copper-based multilayer laminated bus-bar so that the SiC modules can be connected to the DC-link capacitors in the low-inductance loops. The thermal performance and mechanical strength of the bus-bar are simulated by COMSOL, and the parasitic parameters of it are simulated by Ansys Q3D. In addition, the detection and control methods used in the PEBB are also mentioned. The structure of the PEBB is completed by the integrated layout design. Finally, a 57.6 kW PEBB prototype is built. A pump-back test platform whose topology is a dual active bridge is built through two PEBBs. The experiment shows the temperature rise of SiC modules is low, and the maximum drain-source voltage of the SiC MOSFET is 1244V. The PEBB operates stably and reliably at 56.7kW, and the power density is up to 1920kW/m3.