{"title":"用于超高频空间应用的GaN SSPA","authors":"A. Katz, Brian Eggleston, J. MacDonald","doi":"10.1109/MWSYM.2013.6697695","DOIUrl":null,"url":null,"abstract":"UHF Solid State Power Amplifiers (SSPAs) for use in government and commercial communications satellites have been developed. These SSPAs combine high-voltage gallium nitride (GaN) FET technology with predistortion linearization (PDL) to allow the achievement of both linearity and record high efficiency. A peak power of more than 170 W with a power added efficiency (PAE) of 90% has been achieved. The SSPAs can be operated at lower power for multi-carrier WCDMA operation. A PAE of > 80% was achieved with a WCDMA adjacent channel level ratio (ACLR) of -25 dB.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"GaN SSPA for UHF space applications\",\"authors\":\"A. Katz, Brian Eggleston, J. MacDonald\",\"doi\":\"10.1109/MWSYM.2013.6697695\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"UHF Solid State Power Amplifiers (SSPAs) for use in government and commercial communications satellites have been developed. These SSPAs combine high-voltage gallium nitride (GaN) FET technology with predistortion linearization (PDL) to allow the achievement of both linearity and record high efficiency. A peak power of more than 170 W with a power added efficiency (PAE) of 90% has been achieved. The SSPAs can be operated at lower power for multi-carrier WCDMA operation. A PAE of > 80% was achieved with a WCDMA adjacent channel level ratio (ACLR) of -25 dB.\",\"PeriodicalId\":128968,\"journal\":{\"name\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697695\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
UHF Solid State Power Amplifiers (SSPAs) for use in government and commercial communications satellites have been developed. These SSPAs combine high-voltage gallium nitride (GaN) FET technology with predistortion linearization (PDL) to allow the achievement of both linearity and record high efficiency. A peak power of more than 170 W with a power added efficiency (PAE) of 90% has been achieved. The SSPAs can be operated at lower power for multi-carrier WCDMA operation. A PAE of > 80% was achieved with a WCDMA adjacent channel level ratio (ACLR) of -25 dB.
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