高性能纳米级mosfet的高迁移率材料和新型器件结构

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346871

K. Saraswat, C. O. Chui, Donghyun Kim, T. Krishnamohan, A. Pethe

{"title":"高性能纳米级mosfet的高迁移率材料和新型器件结构","authors":"K. Saraswat, C. O. Chui, Donghyun Kim, T. Krishnamohan, A. Pethe","doi":"10.1109/IEDM.2006.346871","DOIUrl":null,"url":null,"abstract":"Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"82","resultStr":"{\"title\":\"High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs\",\"authors\":\"K. Saraswat, C. O. Chui, Donghyun Kim, T. Krishnamohan, A. Pethe\",\"doi\":\"10.1109/IEDM.2006.346871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"82\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 82

摘要

未来的节点需要具有高迁移率的沟道材料来满足mosfet的ITRS要求。在这项工作中，我们评估了Si, Ge和III-V材料(如GaAs, InAs和InSb)的性能，这些材料的性能甚至可能优于非常高应变的Si

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs

Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 International Electron Devices Meeting

自引率

0.00%

发文量