中波红外量子点发光二极管

2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Pub Date : 2020-08-01 DOI:10.1109/rapid49481.2020.9195710

A. Muhowski, A. Briggs, L. Nordin, A. M. Skipper, P. Petluru, S. Bank, D. Wasserman

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引用次数: 0

摘要

我们提出了ii型量子点(QD)基发光二极管(led)中波红外波长的设计，生长，制造和表征。我们展示了有希望的温度性能的qd - led，并将其纳入单片等离子体腔。讨论了单个量子发射极器件的潜力。

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Mid-Wave Infrared Quantum Dot Light Emitting Diodes

We present the design, growth, fabrication, and characterization of type-II quantum-dot (QD) based light emitting diodes (LEDs) mid-wave infrared wavelengths. We demonstrate promising temperature performance for the QD-LEDS and as their incorporation into monolithic plasmonic cavities. The potential for individual quantum emitter devices is discussed.

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2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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