{"title":"水库耦合量子点自洽电荷密度的数值计算方法","authors":"A. Scholze, A. Schenk, W. Fichtner","doi":"10.1109/IWCE.1998.742700","DOIUrl":null,"url":null,"abstract":"The calculation of self-consistent charge densities is not a straightforward task in structures with zero-dimensional confinement. In contrast to the semi-classical case the density of states in a quantum dot depends on the potential. However, this dependence is not explicitly given and Newton-Raphson methods are therefore difficult to employ. In this paper we present a numerical method for the calculation of self-consistent electron densities in a quantum dot weakly coupled to a macroscopic reservoir using a multidimensional secant approach that partially overcomes the numerical limitations intrinsic to single-electron transistor device simulations.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical method for the calculation of self-consistent charge densities of reservoir-coupled quantum dots\",\"authors\":\"A. Scholze, A. Schenk, W. Fichtner\",\"doi\":\"10.1109/IWCE.1998.742700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The calculation of self-consistent charge densities is not a straightforward task in structures with zero-dimensional confinement. In contrast to the semi-classical case the density of states in a quantum dot depends on the potential. However, this dependence is not explicitly given and Newton-Raphson methods are therefore difficult to employ. In this paper we present a numerical method for the calculation of self-consistent electron densities in a quantum dot weakly coupled to a macroscopic reservoir using a multidimensional secant approach that partially overcomes the numerical limitations intrinsic to single-electron transistor device simulations.\",\"PeriodicalId\":357304,\"journal\":{\"name\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.1998.742700\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical method for the calculation of self-consistent charge densities of reservoir-coupled quantum dots
The calculation of self-consistent charge densities is not a straightforward task in structures with zero-dimensional confinement. In contrast to the semi-classical case the density of states in a quantum dot depends on the potential. However, this dependence is not explicitly given and Newton-Raphson methods are therefore difficult to employ. In this paper we present a numerical method for the calculation of self-consistent electron densities in a quantum dot weakly coupled to a macroscopic reservoir using a multidimensional secant approach that partially overcomes the numerical limitations intrinsic to single-electron transistor device simulations.