稳健性IGBT器件短路特性的实验研究

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004096

S. Musumeci, R. Pagano, A. Raciti, L. Fragapane, M. Melito

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引用次数: 2

摘要

本文讨论了一种新型鲁棒IGBT器件在几种实验室测试条件下的短路行为。通过感性负载的室内试验，确定了硬开关故障和有载故障的暂态行为。igbt已经在几种工作条件下进行了测试，旨在解释不同的器件特性，布局寄生和栅极驱动条件的差异。在故障行为中考虑了温度的变化，以充分评价开关性能作为主要参数的函数。最后讨论了一种具有增强短路坚固性的智能IGBT器件的特点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimental investigation on the short circuit behaviors of robust IGBT devices

The paper deals with the short circuit behavior of a new family of robust IGBT devices in several laboratory tests conditions. The transient behaviors in hard switching fault (HSF) and fault under load (FUL) have been determined by means of laboratory tests on inductive load. The IGBTs have been tested in several working conditions aiming to account for the different device characteristics, the differences in both the layout parasitic and the gate driving conditions. Also the temperature variation has been considered in the faulted behavior in order to fully evaluate the switching performances as function of the main involved parameters. Finally the characteristics of a smart IGBT device with increased short circuit ruggedness are discussed.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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