S. Moroni, V. Dimastrodonato, T. Chung, G. Juska, A. Gocalinska, D. Vvedensky, E. Pelucchi
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Modeling InGaAs MOVPE in V-grooves and pyramidal recesses
In this work we present the modeling of Metal Organic Vapour-Phase Epitaxy (MOVPE) of InGaAs nanostructures in non-planar V-grooves and pyramidal recesses. Our well-established growth model has been first employed to find a set of optimized kinetic parameters for InGaAs epitaxy by fitting the morphological and compositional evolution during the growth of In0.12Ga0.88As V-groove quantum wires. These parameters allowed also reproducing the growth of In0.25Ga0.75As nanostructures formed in pyramidal site-controlled quantum dot systems. Finally, the temperature dependence of the structures resulting from our simulation has been compared to the optical properties previously reported in our studies.
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