用于射频开关应用的稳健AlGaN/GaN HEMT技术

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062456

M. D. Hodge, R. Vetury, J. Shealy, R. Adams

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引用次数: 12

摘要

作者报告的结果表明，为射频开关应用开发的GaN hemt不会受到反向压电效应相关的可靠性失效机制的影响。在击穿电压之前没有观察到临界电压，这表明稳健的GaN HEMT技术非常适合射频开关应用。

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A Robust AlGaN/GaN HEMT Technology for RF Switching Applications

The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF switching applications.

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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