用于生物力学植入物的自供电CMOS冲击率监测器

Chenling Huang, S. Chakrabartty
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引用次数: 2

摘要

我们之前报道了一种新型的自供电压电浮动门传感器,可用于长期监测生物力学植入物的应变水平。在本文中,我们将这项工作扩展到监测冲击率(应变水平变化率),这对预测机械疲劳很重要。我们增加了一个滤波和触发电路的压电浮动门传感器,只有当冲击超过预定的阈值水平时,才会激活电离热电子注入(IHEI)。利用0.5 μ m标准CMOS工艺制作的多个原型,我们表征了传感器在不同偏置条件下的失配性能和变异性。使用原型获得的实验结果表明,传感器可以在105个周期的持续时间内记录不同的冲击率水平。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-powered CMOS impact-rate monitors for biomechanical implants
We have previously reported a novel self-powered piezo-floating-gate sensor that can be used for long-term monitoring of strain levels in biomechanical implants. In this paper, we extend this work to monitor impact-rates (rate of change of strain levels) which is important for predicting mechanical fatigue. We augment the piezo-floating-gate sensor with a filtering and triggering circuit that activates the ionized-hot-electron-injection (IHEI) only when the impactrates exceed predetermined threshold levels. Using multiple prototypes fabricated in a 0.5-mum standard CMOS process we characterize the performance of the sensor for mismatch and for its variability under different biasing conditions. Experimental results obtained using the prototypes demonstrate that the sensor can record different impact-rate levels over a duration of 105 cycles.
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