{"title":"碳:纳米电子学的未来","authors":"L. Rispal, U. Schwalke","doi":"10.1109/ICSCS.2009.5414197","DOIUrl":null,"url":null,"abstract":"In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphenebased transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Carbon: The future of nanoelectronics\",\"authors\":\"L. Rispal, U. Schwalke\",\"doi\":\"10.1109/ICSCS.2009.5414197\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphenebased transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.\",\"PeriodicalId\":126072,\"journal\":{\"name\":\"2009 3rd International Conference on Signals, Circuits and Systems (SCS)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 3rd International Conference on Signals, Circuits and Systems (SCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSCS.2009.5414197\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSCS.2009.5414197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphenebased transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.