{"title":"一种新的深亚微米mosfet宽带建模技术","authors":"Ming Hsiang Chiou, K. Hsu","doi":"10.1109/ISDRS.2003.1272033","DOIUrl":null,"url":null,"abstract":"In this presentation, a new modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFETs, which leads to wideband models. This new method is suitable for modeling of MOSFETs used in high-speed or switching type circuits. To meet the wideband requirement without any alteration on the DC bias condition, the equivalent circuit models incorporate BSIM3v3 during the modelling process.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new wideband modeling technique for deep sub-micron MOSFETs\",\"authors\":\"Ming Hsiang Chiou, K. Hsu\",\"doi\":\"10.1109/ISDRS.2003.1272033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this presentation, a new modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFETs, which leads to wideband models. This new method is suitable for modeling of MOSFETs used in high-speed or switching type circuits. To meet the wideband requirement without any alteration on the DC bias condition, the equivalent circuit models incorporate BSIM3v3 during the modelling process.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new wideband modeling technique for deep sub-micron MOSFETs
In this presentation, a new modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFETs, which leads to wideband models. This new method is suitable for modeling of MOSFETs used in high-speed or switching type circuits. To meet the wideband requirement without any alteration on the DC bias condition, the equivalent circuit models incorporate BSIM3v3 during the modelling process.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
