多晶硅薄膜CMOS技术:穷人的SOI

A. Ipri, G. Dolny, S. Policastro, R. Stewart, D. Peters
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引用次数: 0

摘要

讨论了薄膜多晶硅晶体管的电学特性及其各种用途。多晶硅晶体管的第一个主要应用是制造有源矩阵液晶显示器。在4英寸的玻璃晶圆上制造了超过40000个器件,用于制作仅写动态存储器类型的全晶圆阵列。多晶硅晶体管的第二个主要应用是作为静态存储器中多晶硅负载电阻的替代品。未来的应用包括在同一集成电路中使用大块硅晶体管和低性能绝缘体上硅多晶硅晶体管的电路。典型的应用是需要不同衬底偏置和结隔离不足的阵列
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Polycrystalline silicon thin-film CMOS technology: the poor man's SOI
The authors discuss the electrical characteristics of thin film polycrystalline silicon transistors and their various uses. The first major application of polysilicon transistors was in the fabrication of active matrix liquid crystal displays. Over 40000 devices are fabricated on a four inch glass wafer and are used to make write only dynamic memory type full wafer arrays. The second major application of polysilicon transistors is as a replacement for the polysilicon load resistor in static memories. Future applications include circuits where both bulk silicon transistors and low performance silicon-on-insulator polysilicon transistors are used in the same integrated circuit. Typical of these applications are arrays where different substrate biases are needed and where junction isolation is insufficient for the application.<>
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