研究脉冲超声载荷下半导体声诱导过程动力学的新方法

Y. Olikh, O. Lyubchenko, M. Tymochko, Y. Lepikh, Svitlana Gapochenko, O. Olikh
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引用次数: 0

摘要

考虑了利用脉冲超声加载对半导体材料中的电流过程进行动态修饰。结果表明,所揭示的声导的时间、温度、振幅和频率特征为研究半导体缺陷结构开辟了新的方法可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new method for investigating the kinetics of acoustically induced processes in semiconductors with pulsed ultrasound loading
The use of pulsed ultrasound loading for dynamic modification of current flow processes in semiconductor materials was considered. It was shown that the revealed features of time, temperature, amplitude, and frequency characteristics of the acoustoconductivity open new methodical possibilities for studying the defective structure of semiconductors.
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