一种基于高增益CMOS兼容侧双极晶体管(LBT)的主动像素传感器(APS)

Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI:10.1109/ICSENS.2003.1279151

Chen Xu, Chao Shen, P. Ko, M. Chan

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引用次数: 2

摘要

本文介绍了一种基于蓝宝石上硅(SOS)衬底的高增益CMOS兼容侧双极晶体管(LBT)的创新有源像素传感器。新设计提出了许多独特的特点，以克服在SOI相关技术中制造高性能APS的困难，包括:(1)PMOSFET复位晶体管增加像素电压摆幅而不会造成面积损失;(2) LBT作为电荷传感元件，提高响应性;(3)通过透明蓝宝石衬底进行背面照明，提高光透射率。APS已在Peregrine的0.5 /spl mu/m SOS CMOS工艺中实现，并经验证可在1.2 V的低电源电压下工作。

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An active pixel sensor (APS) based on high gain CMOS compatible lateral bipolar transistor (LBT) on SOS substrate with backside illumination

In this paper, an innovative Active Pixel Sensor based on high gain CMOS compatible Lateral Bipolar Transistor (LBT) on Silicon-on-Sapphire (SOS) substrate has been introduced. A number of unique features are presented in the new design to overcome the difficulties to fabricate high performance APS in SOI related technology, including: (1) PMOSFET reset transistor to increase pixel voltage swing without area penalty; (2) a LBT as charge sensing element to increase responsivity; and (3) backside illumination through the transparent sapphire substrate to improve optical transmission. The APS has been implemented in a Peregrine's 0.5 /spl mu/m SOS CMOS process and verified to work at a low power supply voltage of 1.2 V.

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Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)

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