高dIrr/dt条件下高压平面二极管反向恢复破坏抗扰度分析及改进

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509514

Y. Tomomatsu, E. Suekawa, T. Enjyoji, M. Takeda, H. Kondoh, H. Hagino, T. Yamada

{"title":"高dIrr/dt条件下高压平面二极管反向恢复破坏抗扰度分析及改进","authors":"Y. Tomomatsu, E. Suekawa, T. Enjyoji, M. Takeda, H. Kondoh, H. Hagino, T. Yamada","doi":"10.1109/ISPSD.1996.509514","DOIUrl":null,"url":null,"abstract":"Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of local heating resulted in a design principle for improving destruction immunity of the diode. Diodes designed according to the present principle showed excellent destruction immunity under high dIrr/dt condition.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dIrr/dt condition\",\"authors\":\"Y. Tomomatsu, E. Suekawa, T. Enjyoji, M. Takeda, H. Kondoh, H. Hagino, T. Yamada\",\"doi\":\"10.1109/ISPSD.1996.509514\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of local heating resulted in a design principle for improving destruction immunity of the diode. Diodes designed according to the present principle showed excellent destruction immunity under high dIrr/dt condition.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509514\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 29

摘要

对平面二极管反向恢复特性的计算机模拟表明，即使二极管上的浪涌电压低于其静态击穿电压，阳极的角落也会发生局部加热。通过对局部发热源的分析，提出了提高二极管抗破坏能力的设计原则。根据该原理设计的二极管在高dIrr/dt条件下具有良好的抗破坏能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dIrr/dt condition

Computer simulation for reverse recovery characteristics of a planar diode revealed that local heating occurred at the corner of the anode even when a surge voltage across the diode was lower than its static breakdown voltage. Analysis for origin of local heating resulted in a design principle for improving destruction immunity of the diode. Diodes designed according to the present principle showed excellent destruction immunity under high dIrr/dt condition.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

自引率

0.00%

发文量