{"title":"功率二极管瞬态特性的精确模型","authors":"R. Kraus, K. Hoffmann, H. Mattausch","doi":"10.1109/PESC.1992.254792","DOIUrl":null,"url":null,"abstract":"A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included. Comparisons between simulations and measurements show less than 10% deviation of current and voltage over the temperature range of 25 degrees C-125 degrees C.<<ETX>>","PeriodicalId":402706,"journal":{"name":"PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"51","resultStr":"{\"title\":\"A precise model for the transient characteristics of power diodes\",\"authors\":\"R. Kraus, K. Hoffmann, H. Mattausch\",\"doi\":\"10.1109/PESC.1992.254792\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included. Comparisons between simulations and measurements show less than 10% deviation of current and voltage over the temperature range of 25 degrees C-125 degrees C.<<ETX>>\",\"PeriodicalId\":402706,\"journal\":{\"name\":\"PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"51\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1992.254792\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1992.254792","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A precise model for the transient characteristics of power diodes
A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included. Comparisons between simulations and measurements show less than 10% deviation of current and voltage over the temperature range of 25 degrees C-125 degrees C.<>
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