碳化硅反转层的电子迁移率模型

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1272022

Y. Zeng, M. White

{"title":"碳化硅反转层的电子迁移率模型","authors":"Y. Zeng, M. White","doi":"10.1109/ISDRS.2003.1272022","DOIUrl":null,"url":null,"abstract":"This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"50 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electron mobility model for silicon carbide inversion layers\",\"authors\":\"Y. Zeng, M. White\",\"doi\":\"10.1109/ISDRS.2003.1272022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"50 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文提出了一个基于物理的反演层电子迁移率模型，该模型考虑了表面粗糙度和库仑散射这两种限制碳化硅mosfet中电子迁移率的主要机制的综合影响。在铝注入表面上制备了MOSFET，分析了其转移特性，并比较了相应的跨导曲线。

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Electron mobility model for silicon carbide inversion layers

This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared.

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International Semiconductor Device Research Symposium, 2003

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