用于40gb /s光纤市场的变形PIN光电二极管

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964388

C. Whelan, P. Marsh, R. Leoni, J. Hunt, M. Grigas, W. Hoke, K. C. Hwang, T. Kazior, A. Joshi, X. Wang

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引用次数: 8

摘要

在GaAs衬底上制备了吸收1.55 /spl μ m波长光的高速变质PIN二极管。基于In/sub 0.53/Ga/sub 0.47/ as的顶光结构在10 V反向偏置下具有7 nA的低稳定暗电流。封装二极管的带宽为- 3db，为52 GHz，响应率为0.52 a /W。这种在高度可制造的GaAs衬底上制造的最先进的二极管显然适用于40 Gbit/s光纤电信市场，并为变质oeic打开了大门。

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Metamorphic PIN photodiodes for the 40 Gb/s fiber market

High-speed metamorphic PIN diodes that absorb at 1.55 /spl mu/m wavelength light were fabricated on a GaAs substrate. The In/sub 0.53/Ga/sub 0.47/As-based top-illuminated structure showed a low, stable dark current of 7 nA at 10 V reverse bias. The packaged diode demonstrated a -3 dB bandwidth of 52 GHz and 0.52 A/W responsivity. This state-of-the-art diode fabricated on a highly manufacturable GaAs substrate is clearly suitable for the 40 Gbit/s fiber optic telecommunication market, and opens the door for metamorphic OEICs.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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