光电器件用磷化镓纳米线

2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 1900-01-01 DOI:10.1109/MICROCOM.2016.7522443

Umesh Rizal, B. Swain, B. S. Swain

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引用次数: 1

摘要

采用化学气相沉积(CVD)的氧化辅助生长机制合成了磷化镓纳米线(GaP-NWs)，并对其光电性能进行了研究。纳米线的直径在20 ~ 80 nm之间，长度可达数十微米。横向光学(TO)和纵向光学(LO)声子证实了GaP-NWs在364和398 cm-1处的宽而强的拉曼光谱。高分辨(HR) x射线衍射(XRD)结果表明，在GaP-NWs的化学网络中存在硅的附加峰。光致发光光谱显示出强烈的PL峰，表明其在光电器件中的潜在应用。

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Gallium phosphide nanowires for optoelectronic devices

Gallium phosphide nanowires (GaP-NWs) were synthesized via oxide assisted growth mechanism in a chemical vapor deposition (CVD) and their optoelectronic properties were studied. The diameters of nanowires were in the range of 20-80 nm and lengths extended up to tens of micrometers. Raman spectra studies of GaP-NWs reveal broad and intense peaks at 364 and 398 cm-1 confirmed from transverse optic (TO) and longitudinal optics (LO) phonon. High resolution (HR) X-ray diffraction (XRD) reveals an addition peak that indicates presence of silicon in chemical network of GaP-NWs. Photoluminescence spectra shows intense PL peaks, indicating their potential applications in optoelectronic devices.

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2016 International Conference on Microelectronics, Computing and Communications (MicroCom)

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