利用深度反应离子刻蚀技术实现高纵横比纳米柱型光子晶体

Digest of the LEOS Summer Topical Meetings Biophotonics/Optical Interconnects and VLSI Photonics/WBM Microcavities, 2004. Pub Date : 2004-06-28 DOI:10.1109/LEOSST.2004.1338718

H. Teo, M. Yu, J. Singh, N. Ranga, J. Li, W. C. Yew, A. Liu

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摘要

本文采用深度反应离子刻蚀技术实现了高纵横比纳米柱型光子晶体。通过不同的工艺参数获得不同的高度和深度，研究了决定纳米柱粗糙度的侧壁扇形。

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Realization of high aspect ratio nanopillar type photonic crystal by deep reactive ion etching

In this paper realization of high aspect ratio nanopillar type photonic crystal by deep reactive ion etching. Sidewall scallops that determines the roughness on the nanopillars were also investigated for the different height and depths obtained through varying process parameters.

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来源期刊

Digest of the LEOS Summer Topical Meetings Biophotonics/Optical Interconnects and VLSI Photonics/WBM Microcavities, 2004.

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