0.25um低功耗CMOS工艺的高效参数提取与统计分析

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194514

E.V. Saavedra Diaz, K. McCarthy, D. Klaassen, A. Mathewson

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引用次数: 3

摘要

提出了一种适用于深亚微米CMOS工艺的高效参数提取策略。该方法已应用于生成0.25微米工艺的统计参数数据库，并通过主成分分析生成电路仿真的最佳和最差情况模型。

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Efficient Parameter Extraction and Statistical Analysis for a 0.25um low-power CMOS Process

An efficient parameter extraction strategy suitable for deep submicron CMOS processes is presented. This has been applied to generate a statistical parameter database for a 0.25 micron process and to generate best and worst case models for circuit simulation by means of Principal Component Analysis.

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来源期刊

27th European Solid-State Device Research Conference

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