基于Ge/SiGe量子阱结构的硅光子学

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2016-07-10 DOI:10.1109/ICTON.2016.7550395

D. Marris-Morini, P. Chaisakul, J. Frigerio, M. Rouifed, V. Vakarin, D. Chrastina, X. Le roux, G. Isella, L. Vivien

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引用次数: 0

摘要

Ge/SiGe量子阱结构具有革新硅光子学的强大潜力。本文综述了近年来高速调制器和光电探测器、电折射、QYV工程在波长调谐和波导集成方面的研究进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Silicon photonics based on Ge/SiGe quantum well structures

Ge/SiGe Quantum well structures have a strong potential to revolutionize silicon photonics. This paper review recent works including high speed modulator and photodetector, electro-refraction, QYV engineering to tune the wavelength and waveguide integration.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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