{"title":"使用70纳米InP hemt的2至92 GHz分布式放大器","authors":"Yihu Li, W. Goh, Y. Xiong","doi":"10.1109/IEEE-IWS.2015.7164547","DOIUrl":null,"url":null,"abstract":"This paper presents a broad band distributed amplifier (DA). The amplifying cell utilizes the cascode structure with transistor dimension mismatch. With different sizes of the transistor used, the input and output capacitance will be more balanced and hence, better impedance matching is achieved for the designed DA. 70 nm InP HEMTs are used to fabricate the proposed design, the total chip area occupied is 2.9mm×0.85mm including the bonding pads. The DA achieves a band width of 2 to 82 GHz, with the average gain of 21 dB. The total power consumption of the DA is 300 mW with a power supply voltage of 2 V.","PeriodicalId":164534,"journal":{"name":"2015 IEEE International Wireless Symposium (IWS 2015)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 2 to 92 GHz distributed amplifier using 70-nm InP HEMTs\",\"authors\":\"Yihu Li, W. Goh, Y. Xiong\",\"doi\":\"10.1109/IEEE-IWS.2015.7164547\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a broad band distributed amplifier (DA). The amplifying cell utilizes the cascode structure with transistor dimension mismatch. With different sizes of the transistor used, the input and output capacitance will be more balanced and hence, better impedance matching is achieved for the designed DA. 70 nm InP HEMTs are used to fabricate the proposed design, the total chip area occupied is 2.9mm×0.85mm including the bonding pads. The DA achieves a band width of 2 to 82 GHz, with the average gain of 21 dB. The total power consumption of the DA is 300 mW with a power supply voltage of 2 V.\",\"PeriodicalId\":164534,\"journal\":{\"name\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2015.7164547\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Wireless Symposium (IWS 2015)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2015.7164547","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2 to 92 GHz distributed amplifier using 70-nm InP HEMTs
This paper presents a broad band distributed amplifier (DA). The amplifying cell utilizes the cascode structure with transistor dimension mismatch. With different sizes of the transistor used, the input and output capacitance will be more balanced and hence, better impedance matching is achieved for the designed DA. 70 nm InP HEMTs are used to fabricate the proposed design, the total chip area occupied is 2.9mm×0.85mm including the bonding pads. The DA achieves a band width of 2 to 82 GHz, with the average gain of 21 dB. The total power consumption of the DA is 300 mW with a power supply voltage of 2 V.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
