基于多波长拉曼光谱的三维闪存多晶硅通道晶粒尺寸监测

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) Pub Date : 2014-10-01 DOI:10.1109/NVMTS.2014.7060843

W. Yoo, T. Ishigaki, T. Ueda, K. Kang, N. Kwak, D. Sheen, Sung Soon Kim, M. Ko, W. S. Shin, Byung-Seok Lee, S. Yeom, S. Park

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引用次数: 10

摘要

利用拉曼光谱技术对三维V-NAND器件晶圆垂直通道区化学气相沉积(CVD) a-Si薄膜进行热处理后的多晶硅进行了表征。利用多波长拉曼光谱系统测量了a- si薄膜的结晶和退火条件和工艺下多晶硅的晶粒生长。

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Grain size monitoring of 3D flash memory channel poly-Si using multiwavelength Raman spectroscopy

Raman spectroscopy was used for characterizing poly-Si after thermal annealing of chemical vapor deposited (CVD) thin a-Si films in the vertical channel region of 3D V-NAND device wafers using various annealing conditions and techniques. Raman spectra, indicating crystallization of a-Si films and grain growth of poly-Si with respect to annealing conditions and techniques, was measured using a multiwavelength Raman spectroscopy system.

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2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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